Impact of nitrogen incorporation on low-frequency noise of polycrystalline silicon/TiN/HfO2/SiO2 gate-stack metal-oxide-semiconductor field-effect transistors (Special issue: Dielectric thin films for future electron devices: science and technology)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Yamada Keisaku

  Nanotechnology Research Laboratories Waseda University

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Ohmori Kenji

  Nanotechnology Laboratory, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku-ku, Tokyo 162-0041, Japan

• Hettiarachchi Ranga

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

• Matsuki Takeo

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

• Feng Wei

  Nanotechnology Research Laboratory, Waseda University, Shinjuku, Tokyo 162-0041, Japan

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