Efficient Structure for Deep-Ultraviolet Light-Emitting Diodes with High Emission Efficiency: A First-Principles Study of AlN/GaN Superlattice

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概要

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• We investigate an efficient structure for the near-band-edge C-plane emission of a deep-ultraviolet light-emitting diode using first-principles calculations based on density functional theory. We find that a negative crystal-field splitting in the AlN bulk is converted to a positive one in the AlN/GaN superlattice with more than one GaN monolayer. The quantum-confinement Stark effect is minimized by decreasing the GaN thickness down to 1--2 monolayers. The optical matrix element of such superlattices is 57% relative to the GaN bulk, and its C-plane component accounts for the majority of the total; the emission wavelength is found to be 224 nm. The reverse of the negative \Delta_{\text{CR}} in the AlN/GaN superlattice is ascribed mainly to two factors: quantum confinement effects and the internal parameter u. Our calculations demonstrate that using the AlN/GaN superlattices with one or two GaN monolayers significantly improves the near-band-edge C-plane emission of deep-UV light-emitting diodes.

• 2012-02-25

著者

• Kasu Makoto

  Ntt Basic Research Laboratories

• Shiraishi Kenji

  Graduate School Of Applied Physics Univ Of Tsukuba

• Kamiya Katsumasa

  Graduate School Of Pure And Applied Sciences University Of Tsukuba

• Ebihara Yasuhiro

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Kamiya Katsumasa

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

• Kasu Makoto

  NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

• Shiraishi Kenji

  Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan

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