Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface
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概要
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Epitaxial growth of an AlGaN/GaN high-electron mobility trainsistor (HEMT) structure on a diamond (111) substrate was investigated. Due to the misorientation of the diamond (111) surface, the AlGaN/GaN HEMT structure showed the macro-step surface. Using diamond surfaces with two different misorientation angles (3 and 0.5°), we found that the one with the small misorientation angle is effective for obtaining a flat AlGaN/GaN HEMT surface. Threading dislocation density of the AlGaN/GaN HEMT structure grown on the diamond (111) surface was evaluated from cross-sectional transmission electron microscope images. The densities of pure-screw-, pure-edge- and mixed-type threading dislocation were 0.3\times 10^{9}, 4.1\times 10^{9}, and 4.5\times 10^{9} cm-2, respectively. The AlGaN/GaN HEMT eptaxially grown on the diamond (111) substrate showed the maximum drain current of 800 mA/mm with little self-heating effect.
- 2012-09-25
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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Taniyasu Yoshitaka
Ntt Basic Research Laboratories Ntt Corporation
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Hirama Kazuyuki
Ntt Basic Research Laboratories Ntt Corporation
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Hirama Kazuyuki
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Taniyasu Yoshitaka
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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Kasu Makoto
NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan
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