High Temperature Operation of Boron-Implanted Diamond Field-Effect Transistors
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概要
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Diamond field effect transistors (FETs) with Pt or Al Schottky gate electrodes were fabricated on high-quality boron (B)-implanted layers formed by combining ion-implantation and high-pressure and high-temperature annealing. The high temperature characteristics of these FETs were examined. Pt-gate B-implanted diamond FETs showed maximum drain current ($I_{\text{DS}}$) of 0.16 mA/mm at gate voltage of $-2$ V and drain voltage of $-20$ V at 25 °C. The $I_{\text{DS}}$ increased as temperature increased because of the activation of boron, and it showed maximum value of 3.9 mA/mm at ${\sim}200$ °C. Al-gate FETs showed similar temperature dependence of $I_{\text{DS}}$, though the operation temperature and $I_{\text{DS}}$ were higher than those of Pt-gate FETs. High-temperature operation of the B-implanted diamond FETs was possible above 550 °C without severe drain bulk leakage, though the maximum $I_{\text{DS}}$ gradually decreased as temperature increased because of drain bulk leakage above 300 °C.
- 2010-04-25
著者
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Kasu Makoto
Ntt Basic Research Laboratories
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Ueda Kenji
Ntt Basic Research Laboratories Ntt Corporation
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Kenji Ueda
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Makoto Kasu
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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