Low-Temperature Growth of MgB2 Thin films with $T_{\text{c}}$ above 38 K
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概要
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MgB2 thin films with the $T_{\text{c}}$ above 38 K have been fabricated using molecular beam epitaxy (MBE) at the growth temperature below 300 °C. The $T_{\text{c}}$ of 38.2 K was obtained in 1.3-μm-thick MgB2 films formed on SiC substrates with AlN buffer layers. The $T_{\text{c}}$ is comparable to those of MgB2 single crystals and the highest among MgB2 films fabricated below 500 °C. Increase of the film thickness of MgB2 above 1 μm was the key point to obtain high-quality films at low growth temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Ueda Kenji
Ntt Basic Research Laboratories Ntt Corporation
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Makimoto Toshiki
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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