p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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KUMAKURA Kazuhide
NTT Basic Research Laboratories, NTT Corporation
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MAKIMOTO Toshiki
NTT Basic Research Laboratories, NTT Corporation
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Makimoto Toshiki
Ntt Basic Laboratories Ntt Corporation
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Nishikawa Atsushi
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Research Laboratories Ntt Corporation
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Kumakura Kazuhide
Ntt Basic Laboratories Ntt Corporation
関連論文
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- Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
- Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
- Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
- Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
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- Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
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- Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
- In-Situ STM Observation of GaAs Surfaces after Nitridation
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- Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
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