Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-30

著者

• MAKIMOTO Toshiki

  NTT Basic Research Laboratories, NTT Corporation

• MAEDA Narihiko

  NTT Photonics Laboratories, NTT Corporation

• HIROKI Masanobu

  NTT Photonics Laboratories, NTT Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• Maeda Narihiko

  Ntt Corp. Atsugi‐shi Jpn

• Maeda Narihiko

  Institute For Solid State Physics University Of Tokyo

• TAWARA Takehiko

  NTT Basic Research Laboratories, NTT Corporation

• WANG Chengxin

  NTT Photonics Laboratories, NTT Corporation

• ENOKI Takotomo

  NTT Photonics Laboratories, NTT Corporation

関連論文

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
• Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Magnetic and Electric Field Effects of Photoluminescence of Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs
• Field Effect Photoluminescence from Excitons Bound to Nitrogen Pairs in GaAs
• Influence of Lattice Constants of GaN and InGaN on Npn-type GaN/InGaN Heterojunction Bipolar Transistors
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Low-dislocation AlGaN thin films grown using Al_Si_xN nano-disks (x=0.07-0.17)
• Strained Thick p-InGaN Layers for GaN/InGaN Heterojunction Bipolar Transistors on Sapphire Substrates
• Properties of (111) Diamond Homoepitaxial Layer and Its Application to Field-Effect Transistor
• Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
• Nanoscale Patterning and Selective Growth of GaAs Surfaces by Ultra-High Vacuum Scanning Tunneling Microscopy ( Scanning Tunneling Microscopy)
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• In-Situ STM Observation of GaAs Surfaces after Nitridation
• Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
• In Situ Optical Monitoring of the GaAs Growth Process in MOCVD
• Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
• Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
• Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Extrinsic Base Regrowth of p-InGaN for Npn-Type GaN/InGaN Heterojunction Bipolar Transistors
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices Due to Piezoelectric Field
• Activation Energy and Electrical Activity of Mg in Mg-Doped In_xGa_N(x
• Efficient Hole Generation above 10^ cm^ in Mg-Doped InGaN/GaN Superlattices at Room Temperature
• Enhanced Hole Generation in Mg-Doped AlGaN/GaN Superlattices due to Piezoelectric Field
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Nitrogen Atomic-Layer-Doping on Ga-Terminated and Misoriented GaAs Surfaces by Metalorganic Vapor Phase Epitaxy Using Dimethylhydrazine
• High Critical Electric Field Exceeding 8MV/cm Measured Using AlGaN p-i-n Vertical Conducting Diode on n-SiC Substrate
• GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers
• Efficient Observation of Narrow Isolated Photoluminescence Spectra from Spatially Localized Excitons in InGaN Quantum Wells
• Fabrication of Nanomechanical Structures from Bulk-GaAs Using Angled Ion Etching
• InP/InGaAs Double Heterojunction Bipolar Transistors Grown on Si
• Compressively strained In[x]Al1-xN/Al0.22Ga0.78N/GaN(x=0.245-0.325) heterostructure field effect transistors with Regrown AlGaN contact layers (Special issue: Solid state devices and materials)
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
• Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/Gan Insulated Gate Heterostructure Field-Effect Transistors
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
• DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
• Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
• Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
• Enhanced Dislocation Mobility by Electron-Beam Irradiation in GaP
• 27a-ZG-19 Anti-Stokes photoluminescence originating due to DX centers
• Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
• Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
• Annealing Properties of Si-Atomic-Layer-Doped GaAs
• Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
• Origin of Nitrogen-Pair Luminescence in GaAs Studied by Nitrogen Atomic-Layer-Doping in MOVPE
• Temperature dependence of current-voltage characteristics for AlGaN-based vertical conducting diodes
• p-InGaN/n-GaN Vertical Conducting Diodes on n^+-SiC Substrate for High Power Electronic Device Applications
• Novel Design to Fabricate High Reflectivity GaN-Based Semiconductor/Air Distributed Bragg Reflector With the Tilt of Vertical Sidewall : Semiconductors
• Common - Emitter Current - Voltage Characteristics of Pnp AlGaN/GaN Heterojunction Bipolar Transistors
• Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
• High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
• Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
• Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
• Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
• Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
• Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

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