Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility

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Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
Systematic Study of Insulator Deposition Effect (Si_3N_4, SiO_2, AlN, and Al_2O_3) on Electrical Properties in AlGaN/GaN Heterostructures
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness
Superior Pinch-Off Characteristics at 400℃ in AlGaN/GaN Heterostructure Field Effect Transistors
Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Compressively strained In[x]Al1-xN/Al0.22Ga0.78N/GaN(x=0.245-0.325) heterostructure field effect transistors with Regrown AlGaN contact layers (Special issue: Solid state devices and materials)
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
InAlN barrier layer for GaN-based FET : InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surface
Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/Gan Insulated Gate Heterostructure Field-Effect Transistors
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer and Si_3N_4 Single Layer
Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
Enhanced Dislocation Mobility by Electron-Beam Irradiation in GaP
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector
Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN ($x = 0.245--0.325$) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers
Fabrication of InP/InGaAs DHBTs with Buried SiO_2 Wires
RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
Thermal Diffusion of Si Atoms in Delta-Doped n-Type InAlAs Grown by Metal-Organic Vapor-Phase Epitaxy
High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures
Fabrication of GaN/Alumina/GaN Structure to Reduce Dislocations in GaN
Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
Comparison of AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer and Si3N4 Single Layer
Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures
Metalorganic Vapor Phase Epitaxy Growth of InAlAsSb on InP
Growth of High Electron Mobility Transistor Structure with InAlP Carrier Supply Layer
High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors
Electron Transport Properties in Lightly Si-doped InGaN Films Grown by Metalorganic Vapor Phase Epitaxy
High-Temperature Characteristics in Recessed-Gate AlGaN/GaN Enhancement-Mode Heterostructure Field Effect Transistors with Enhanced-Barrier Structures (Special Issue : Recent Advances in Nitride Semiconductors)

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