Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers

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概要

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• InP-based resonant tunneling diodes (RTDs) with a strained In0.8Ga0.2As well and AlAs barriers were grown by metal-organic vapor-phase epitaxy (MOVPE). Cross-sectional transmission electron microscopy (TEM) confirmed the successful formation of ultra-thin strained AlAs barriers and In0.8Ga0.2As wells. Atomic force microscope (AFM) observation revealed atomically flat interfaces in the double-barrier (DB) structures of the RTDs. We obtained a peak current density ($ j_{\text{P}}$) of $1.46\times 10^{5}$ A/cm2, high peak-to-valley current ratio (PVR) of 7.7, and a low peak voltage ($V_{\text{P}}$) of 0.43 V simultaneously in the RTDs with the barrier thickness ($L_{\text{b}}$) of about 6 monolayers (MLs). Maximum $ j_{\text{P}}$ exceeded $4\times 10^{5}$ A/cm2 in the RTDs with $L_{\text{b}}$ of about 4 MLs. The AlAs barrier thickness was precisely controlled by the Al-precursor-supply duration. These results indicate the potential of the practical use of MOVPE for high-speed InP-based integrated circuits with RTDs and other devices.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-10-15

著者

• Oda Yasuhiro

  Ntt Photonics Laboratories Ntt Corporation

• KOBAYASHI Takashi

  NTT Photonics Laboratories, NTT Corporation

• SUGIYAMA Hiroki

  NTT Photonics Laboratories

• Enoki Takatomo

  Ntt Photonics Laboratories

• Yokoyama Haruki

  Ntt Photonics Lab. Kanagawa Jpn

• Matsuzaki Hideaki

  Ntt Photonics Laboratories

• Oda Yasuhiro

  NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Yokoyama Haruki

  NTT Photonics Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan

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