Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy
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概要
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The impact of growth temperature on the epitaxial layer structure and the negative differential resistance characteristics of pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes (RTDs) with the high peak current density of $5\text{--}10\times 10^{4}$ A/cm2 grown by molecular beam epitaxy was studied. For RTDs with a nominally symmetrical structure and with an InAs sub-well layer thinner than an estimated critical thickness, strong asymmetry in current–voltage characteristics was observed at growth temperatures below the critical growth temperature of 410°C, while a slight reverse asymmetry was observed at higher temperatures. Examinations of the RTD structures by transmission electron microscopy and atomic force microscopy indicated that three-dimensional growth of InAs at lower temperatures degrades the top-AlAs barrier structure. These asymmetric characteristics are explained in terms of the barrier structure asymmetry caused by temperature-dependent growth kinetics by using a simplified current density calculation model.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Matsuzaki Hideaki
Ntt Photonics Laboratories
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Matsuzaki Hideaki
NTT Photonics Laboratories, 3-1, Morinosato-Wakamiya, Atsugi, 243-0198, Japan
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Osaka Jiro
NTT Photonics Laboratories
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Osaka Jiro
NTT Photonics Laboratories, 3-1, Morinosato-Wakamiya, Atsugi, 243-0198, Japan
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