Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
スポンサーリンク
概要
- 論文の詳細を見る
Monolithic integration technology for resonant tunneling diodes (RTDs), Schottky barrier diodes (SBDs), and 0.1-$\mu$m-gate high electron mobility transistors (HEMTs) was developed. The integration process was investigated to overcome the difficulty in fabricating both RTDs with a mesa height of 530 nm and HEMTs with a gate length of 0.1 $\mu$m. The HEMT and SBD structures were grown by metalorganic chemical vapor deposition (MOCVD) on a 2-inch InP substrate. The RTD structure was regrown by molecular beam epitaxy (MBE) on the top layer grown by MOCVD@. The characteristics of the fabricated devices showed good uniformity. An analog-to-digital converter and a selector circuit fabricated with these devices operated properly. The presented integration technology is a promising way to provide novel circuits with RTDs, SBDs and 0.1-$\mu$m-gate HEMTs.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-15
著者
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Murata K
Ntt Photonics Laboratories
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MATSUZAKI Hideaki
NTT Photonics Laboratories, NTT Corporation
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MURATA Koichi
NTT Network Innovation Laboratories
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SANO Kimikazu
NTT Network Innovation Laboratories
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Osaka J
Ntt Photonics Lab. Atsugi Jpn
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Osaka Jiro
Ntt Photonics Laboratories 3-1 Morinosato-wakamiya
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Murata K
Ntt Corp. Atsugi‐shi Jpn
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Itoh Toshihiro
Ntt Photonics Laboratories Ntt Corporation
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Murata K
Ntt Photonics Laboratories Ntt Corporation
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Matsuzaki Hideaki
Ntt Photonics Laboratories
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Osaka Jiro
NTT Photonics Laboratories
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