SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
スポンサーリンク
概要
- 論文の詳細を見る
An SCFL-compatible 40-Gbit/s selector circuit using resonant tunneling diodes(RTDs)and high-electron-mobility transistors(HEMTs)is presented. The circuit comprises two monostable-bistable transition elements(MOBILEs)using RTDs, a HEMT NOR circuit, and a HEMT output buffer based on source-coupled-FET logic(SCFL). The circuit is fabricated by monolithically integrating RTDs and 0.1-μm HEMTs on an InP substrate. The fabricated circuit exhibits clear eye-opening at 40 Gbit/s with an output swing of 800mVp-p, which is close to the conventional high-speed logic IC interface called SCFL.
- 社団法人電子情報通信学会の論文
- 2000-10-25
著者
-
Murata K
Ntt Photonics Laboratories
-
MURATA Koichi
NTT Photonics Laboratories, NTT Corporation
-
Murata Koichi
Ntt Photonics Laboratories Ntt Corporation
-
Murata K
Ntt Corp. Atsugi‐shi Jpn
-
Sano K
Ntt Photonics Laboratories Ntt Corporation
-
Murata K
Ntt Photonics Laboratories Ntt Corporation
-
SANO Kimikazu
The author is with NTT Network Innovation Laboratories
-
MURATA koichi
The author is with NTT Photonics Laboratories
-
MATSUZAKI Hideaki
The author is with NTT Network Innovation Laboratories
-
Maezawa Koichi
Ntt System Electronics Laboratories:(present Address) Faculty Of Engineering Nagoya University
-
Matsuzaki Hideaki
Ntt Photonics Laboratories
関連論文
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Epitaxial Growth of Ti_Al_xN Buffer Layer for a Ferroelectric (Ba, Sr) TiO_3 Capacitor on Si Substrate
- Asymmetric Ferroelectricity and Anomalous Current Conduction in Heteroepitaxial BaTiO_3 Thin Films
- Ferroelectric Properties in Heteroepitaxial Ba_Sr_TiO_3 Thin Films on SrRuO_3/SrTiO_3 Substrates
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- A 40-Gbit/s Decision IC Fabricated with 0.12-μm GaAs MESFETs
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- 70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs
- Ultra-Fast Optoelectronic Decision Circuit Using Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode (Special Issue on Integrated Electronics and New System Paradigms)
- A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
- A Novel Delayed Flip-Flop Circuit Using Resonant Tunneling Logic Gates
- High-Speed Static Frequency Divider Employing Resonant Tunneling Diodes and HEMTs
- High-Speed and Low-Power D-FF Employing MOBILEs : Monostable-Bistable Transition Logic Elements
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Clock Recovery Circuit Using a Resonant Tunneling Diode and a Uni-Traveling-Carrier Photodiode (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- An Optoelectronic Logic Gate Monolithically Integrating Resonant Tunneling Diodes and a Uni-Traveling-Carrier Photodiode
- IC-Oriented Self-Aligned High-Performance AlGaAs/GaAs Ballistic Collection Transistors and Their Applications to High-Speed ICs (Special Issue on Heterostructure Electron Devices)
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- Carrier-Suppressed Return-to- Zero Pulse Generation Using Mode-Locked Lasers for 40-Gbit/s Transmission(Special Issue on 40 Gbit/s Optical Transmission Technologies)
- Study of a PMD Tolerance Extension by InP HBT Analog EDC IC without Adaptive Control in 43G DQPSK Transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- Study of a PMD tolerance extension by InP HBT analog EDC IC without adaptive control in 43G DQPSK transmission
- A Monolithic Microwave-Integrated Circuit Doubler Using a Resonant-Tunneling High-Electron-Mobility Transistor
- An MMIC Resonant-Tunneling HEMT Doubler
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Input Power Dependence of Large-Signal Microwave Characteristics of Resonant-Tunneling High Electron Mobility Transistors
- The Primary Structure of Cassowary (Casuarius casuarius) Goose Type Lysozyme(Biochemistry & Molecular Biology)
- A 24-GS/s 6-bit R-2R Current-Steering DAC in InP HBT Technology
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- InP-based High-speed Transistors and Their IC Applications
- Monolithic Integration of Resonant Tunneling Diodes, Schottky Barrier Diodes and 0.1-$\mu$m-gate High Electron Mobility Transistors for High-Speed ICs
- Purification and Characterization of Goose Type Lysozyme from Cassowary (Casuarlus casuarius) Egg White
- SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
- 10-GHz Operation of Multiple-Valued Quantizers Using Resonant-Tunneling Devices (Special Issue on Multiple-Valued Logic and Its Applications)
- Highly Uniform Regrown In_Ga_As/AlAs/InAs Resonant Tunneling Diodes on In_Ga_As
- Uniformity of the High Electron Mobility Transistors and Resonant Tunneling Diodes Integrated on an InP Substrate Using an Epitaxial Structure Grown by Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition
- Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- 50-Gbit/s Demultiplexer IC Module Using InAlAs/InGaAs/InP HEMTs
- Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (電子デバイス)
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications (マイクロ波)
- Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-µm InP HBTs
- Components in 0.5-μm-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications
- Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta–Sigma Modulator for High Resolution, Wide Band Analog-to-Digital Converters
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors