Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_<1-x>TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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概要

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• To investigate the possibility of their application to both high density dynamic and nonvolatile ferroelectric random access memories, heteroepitaxial Ba_χSr_1-χTiO_3(BSTO) thin films with various Ba content from χ=0 to 1.0 were prepared on conductive SrRuO_3 electrode films, and the crystallographic, dielectric and ferroelectric properties were investigated.The compositional phase boundary between paraelectric and ferroelectric phase at room temperature was located at about χ=0.12 in the heteroepitaxial films, indicating a quite different composition to that of the bulk (χ=0.70).At this composition of χ=0.12, the dielectric constant attained the maximum value of 740 for the BSTO film with a thickness of 77nm.The composition with a lager Ba content (χ≧0.32) showed ferroelectricity at room temperature.The maximum value of remanent polarization of 2Pr=0.38C/m^2 was obtained at the composition of χ=0.70 in this study.

• 社団法人電子情報通信学会の論文
• 1998-04-25

著者

• Kawakubo Takashi

  Corporate R&d Center Toshiba Corporation

• ABE Kazuhide

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• YANASE Naoko

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• KOMATSU Shuichi

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• SANO Kenya

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• FUKUSHIMA Noburu

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• KAWAKUBO Takashi

  The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation

• Sano K

  Ntt Photonics Laboratories Ntt Corporation

• Komatsu S

  Waseda Univ. Tokyo Jpn

• Yanase N

  Corporate R&d Center Toshiba Corporation

• Abe Kazuhide

  Corporate R&d Center Toshiba Corporation

• Fukushima N

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Fukushima N

  Corporate Research & Development Center Toshiba Corporation

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