Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-09-01
著者
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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KOMATSU Shuichi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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ABE Kazuhide
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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YANASE Naoko
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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Komatsu S
Waseda Univ. Tokyo Jpn
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Yanase N
Corporate R&d Center Toshiba Corporation
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Abe Kazuhide
Corporate R&d Center Toshiba Corporation
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
関連論文
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- 半導体デバイス開発におけるTEMの活用 高誘電体膜の場合
- V. デバイス, デバイス材料
- (Ba,Sr)TiO_3膜のエピタキシャル成長と強誘電特性
- 積層形低インピ-ダンス超音波プロ-ブ
- Nonswitching Layer Model for Voltage Shift Phenomena in Heteroepitaxial Barium Titanate Thin Films
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Bistable States of Ferroelectric Hysteresis Loops in a Heteroepitaxial BaTiO_3 Thin Film Capacitor
- Epitaxial Growth of BaTiO_3 Thin Films by High Gas Pressure Sputtering