Crystallographic Orientation Dependence of Dielectric Constant in Epitaxially Grown SrTiO_3 Films
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概要
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Dielectric constants were compared between SrTiO_3(STO) (100) and (110) films, which were epitaxially grown on Pt-deposited MgO (100) and MgO(110) single crystals, respectively. Epitaxial STO films with different orientation were prepared by rf sputtering. The relations between crystallographic orientation of the dielectric films and the substrates were confirmed to be (100)_<STO>⫽(100)_<Pt>⫽(100)_<MgO> and (110)_<STO>(110)_<Pt>(110)_<MgO>. The dielectric constant of the (100) oriented STO film was greater than that of the (110) oriented one. The orientation dependence of the dielectric constant is discussed from the viewpoint of thermodynamic phenomenology. It is clarified that the difference in interface energy between the dielectric and the electrode has an important role in determining the difference in the dielectric constant.
- 社団法人応用物理学会の論文
- 1995-07-15
著者
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阿部 和秀
(株)東芝 研究開発センター
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阿部 和秀
東芝・総合研究所
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Abe Kazuhide
Metals And Ceramics Laboratory Toshiba R&amo;d Center Toshiba Corporation
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Abe Kazuhide
Research And Development Center Toshiba Corporation
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Abe Kazuhide
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
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阿部 和秀
(株)東芝研究開発センター Lsi基盤技術ラボラトリー
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阿部 和秀
(株)東芝
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Research Laboratories R&d Center Toshiba Corporation
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