New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_<8-δ>
スポンサーリンク
概要
- 論文の詳細を見る
A new layered perovskite vanadium oxide Sr_4V_3O_<8-δ> was synthesized and its crystal structure and magnetic properties were studied. Sr_4V_3O_<8-δ> has a novel crystal structure, containing a V-O octahedron and a two-fold V-O fence in a unit cell. It exhibits negative magnetization below 30 K, when cooled in a magnetic field. This magnetism was explained based upon a N-type parasitic ferrimagnetism model.
- 社団法人応用物理学会の論文
- 1993-02-01
著者
-
FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
-
TANAKA Shigenori
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
-
ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
-
Ando K
Advanced Research Laboratory R&d Center Toshiba Corporation
-
TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
-
Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
-
Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Tanaka Shigenori
Advanced Research Laboratory Research And Development Center Toshiba Corporation
-
Fukushima N
Corporate Research & Development Center Toshiba Corporation
-
TANAKA Shigenori
Advanced Research Laboratory, R&D Center, Toshiba Corporation
-
Tanaka Shigenori
Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
-
TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
関連論文
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
- Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
- Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
- Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
- Transition to an Insulator from a Superconductor due to Substitution of Ca by Rare-earth Elements in Bi_4Sr_4RE_2Cu_4O_ (RE=Nd, Eu, Y) : Electrical Properties of Condensed Matter
- Electrical Properties of Single Crystalline CeO_2 High-k Gate Dielectrics Directly Grown on Si(111)
- Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
- Influence of Lattice Distortion and Oxygen Defects in BST Films for Memory Capacitors
- Critical Current Density of Wire Type Y-Ba-Cu Oxide Superconductor
- Oxygen Deficiency and Cu Valence States of Supereonducting Y-Ba-Cu Oxide
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Application of Superconducting Films to Fault Current Limiter
- Single-Crystal Growth of Bi_2 (Sr,Ca)_Cu_2O_x and its Superconductivity : Electrical Properties of Condensed Matter
- Electrical Properties of All-Perovskite Oxide (SrRuO_3/Ba_xSr_TiO_3/SrRuO_3) Capacitors
- New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_
- Identification of 3d^9-3d^84f Transition in Mo XVI
- Transport Critical Current Densities in Cation-Deficient Bi_2(Sr, Ca)_3Cu_2O_
- Variational Quantum Monte Carlo Approach to the Electronic Structure of NiO
- Cohesive Energy of NiO : A Quantum Monte Carlo Approach
- Relationship between Madelung Potentials and Bond Valence Sums in Copper-Oxide Superconductors
- Performance Simulation for Dye-Sensitized Solar Cells: Toward High Efficiency and Solid State