FUKUSHIMA Noburu | Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

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著作論文

Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_

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