Hirano Izumi | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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概要
- HIRANO Izumiの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporationの論文著者
関連著者
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Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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INUMIYA Seiji
Semiconductor Leading Edge Technologies, Inc.
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Inumiya Seiji
Semiconductor Company Toshiba Corporation
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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YAMAGUCHI Takeshi
Research & Development Center, Toshiba Corporation
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HIRANO Izumi
Research & Development Center, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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IIJIMA Ryosuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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FUKUSHIMA Noboru
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Aoyama Tomonori
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Masada Akiko
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Fukatsu Shigeto
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hirano Izumi
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors