Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)

スポンサーリンク

概要

論文の詳細を見る
2004-09-15

著者

関連論文

Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors(Ultra-Thin Gate Insulators,Fundamentals and Applications of Advanced Semiconductor Devices)
Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
Comprehensive Understanding of PBTI and NBTI reliability of High-k / Metal Gate Stacks with EOT Scaling to sub-1nm
Mechanism of Threshold Voltage Reduction and Hole Mobility Enhancement in pMOSFETs Employing Sub-1nm EOT HfSiON by Use of Substrate Fluorine Ion Implantation
Extendibility of High Mobility HfSiON Gate Dielectrics
Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
New Linewidth Measurement System Using Environmental Scanning Electron Microscope Technology
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors
Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_
Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON
Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-$k$/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm
Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
Characterization of Low-$k$/Cu Damascene Structures Using Monoenergetic Positron Beams
Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing
Impact of Gate Metal-Induced Stress on Performance Modulation in Gate-Last Metal–Oxide–Semiconductor Field-Effect Transistors

もっと見る

スポンサーリンク