Fukushima Noburu | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

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著作論文

Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
Direct Growth of Single Crystalline CeO_2 High-k Gate Dielectrics
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_

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