Fukushima N | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

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著作論文

Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
Transition to an Insulator from a Superconductor due to Substitution of Ca by Rare-earth Elements in Bi_4Sr_4RE_2Cu_4O_ (RE=Nd, Eu, Y) : Electrical Properties of Condensed Matter
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_

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