Fukushima N | Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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概要
- FUKUSHIMA Noburuの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporationの論文著者
関連著者
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Fukushima N
Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Ando K
Advanced Research Laboratory R&d Center Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Niu H
Osaka Inst. Technol. Osaka Jpn
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Abe Kazuhide
Corporate R&d Center Toshiba Corporation
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Kawakubo Takashi
Corporate R&d Center Toshiba Corporation
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Yanase N
Corporate R&d Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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ANDO Ken
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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NIU Hiromi
TOSHIBA CORPORATION Research and Development Center
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FUKUSHIMA Noburu
TOSHIBA CORPORATION Research and Development Center
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ANDO Ken
TOSHIBA CORPORATION Research and Development Center
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Niu Hiromi
Toshiba Corporation Research & Development Center
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Ando Ken
Advanced Research Laboratory R & D Center Toshiba Corporation
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Tanaka Shigenori
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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TANAKA Shigenori
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Tanaka Shigenori
Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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NIU Hiromi
Advanced Research Laboratory,Research and Development Center,Toshiba Corporation
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Niu Hiromi
Advanced Research Laboratory Research And Development Center Toshiba Corporation
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Komatsu S
Waseda Univ. Tokyo Jpn
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Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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ABE Kazuhide
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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YANASE Naoko
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KAWAKUBO Takashi
Advanced Discrete Semiconductor Technology Laboratory, Corporate Research & Development Center, Tosh
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KOMATSU Shuichi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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ABE Kazuhide
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu T
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Abe Kazuhide
Material And Devices Research Laboratories R&d Center Toshiba Corporation
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Komatsu Shuichi
Materials And Devices Laboratory R & D Center Toshiba Corporation
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YASUMOTO Takaaki
Corporate R&D Center, Toshiba Corporation
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YANASE Naoko
Corporate R&D Center, Toshiba Corporation
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ABE Kazuhide
Corporate R&D Center, Toshiba Corporation
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FUKUSHIMA Noburu
Corporate R&D Center, Toshiba Corporation
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KAWAKUBO Takashi
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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SANO Kenya
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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YANASE Naoko
Materials and Devices Research Labs., R&D Center, Toshiba Corporation
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ABE Kazuhide
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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YANASE Naoko
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KOMATSU Shuichi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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SANO Kenya
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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FUKUSHIMA Noburu
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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KAWAKUBO Takashi
The authors are with the Materials and Devices Research Laboratories, Toshiba Corporation
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TAKENO Shiro
TOSHIBA CORPORATION Research and Development Center
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NAKAMURA Shin-ichi
TOSHIBA CORPORATION Research and Development Center
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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SATOU Nobutaka
Toshiba Nanoanalysis Corporation
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Yoshiki Masahiko
Toshiba Nanoanalysis Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Sano K
Ntt Photonics Laboratories Ntt Corporation
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Takashima Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Yanase Naoko
Corporate R&d Center Toshiba Corporation
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Yasumoto Takaaki
Corporate R&d Center Toshiba Corporation
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TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Kawakubo Takashi
Materials & Devices Research Laboratories R & D Center Toshiba Corporation
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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TAKENO Shiro
Advanced Research Laboratory, R&D Center, Toshiba Corporation
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Takeno Shiro
Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Influence of Gas Pressure on Sputtering Deposition of Epitaxial BaTiO_3 Thin Films
- Improvement of Ferroelectric Hysteresis Curves in Epitaxial BaTiO_3 Film Capacitors by 2-Step Deposition(Special Issue on Nonvolatile Memories)
- Thickness Dependence of Ferroelectricity in Heteroepitaxial BaTiO_3 Thin Film Capacitors
- Ferroelectric Properties of SrRuO_3/(Ba,Sr)TiO_3/SrRuO_3 Epitaxial Capacitor
- Dielectric and Ferroelectric Properties of Heteroepitaxial Ba_xSr_TiO_3 Films Grown on SrRuO_3/SrTiO_3 Substrates(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
- Relationship between Bond Valence Sums and Pressure Effects on T_c of Oxide Superconductors
- Metal-Insulator Transition in Layered-Perovskite Sr_3V_2O_7
- Bond-Valence-Sum Study on Possible Candidates for High-T_c Oxide Superconductors
- Periodicity Change in Structural Modulation in Bi_2Sr_2Ca_RE_yCu_2O_ (RE = Y, Nd) System
- Effect of Oxygen Content and Sr/Ca Ratio on Superconducting Properties in Bi_2Sr_Ca_Cu_2O : Electrical Properties Condensed Matter
- Electrical and Magnetic Properties in Bi_2Sr_2Ca_Y_xCu_2O : Electrical Properties Condensed Matter
- Transition to an Insulator from a Superconductor due to Substitution of Ca by Rare-earth Elements in Bi_4Sr_4RE_2Cu_4O_ (RE=Nd, Eu, Y) : Electrical Properties of Condensed Matter
- High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
- Effects of Ambient Gas on Dielectric Constant of Sputtered SrTiO_3 Epitaxial Thin Films
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- New Layered Vanadium Oxide with Negative Magnetization, Sr_4V_3O_