SATAKE Hideki | Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
スポンサーリンク
概要
関連著者
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SATAKE Hideki
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Toriumi Akira
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Toriumi Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Toshiba Corporation
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TORIUMI Akira
Advanced LSI Technology Laboratory, Toshiba Corp.
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YAMAGUCHI Takeshi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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ITO Hitoshi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Ito H
Advanced Lsi Technology Laboratory Toshiba Corporation
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Matsushita Daisuke
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Matsushita Daisuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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Yasuda Naoki
Mirai-aset Aist
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Nishikawa Yukie
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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FUKUSHIMA Noburu
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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NARA Akiko
Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.
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SATOU Nobutaka
Toshiba Nanoanalysis Corporation
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Toriumi Akira
Mirai Advanced Semiconductor Research Center (asrc) National Institute Of Advanced Industrial Scienc
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SATAKE Hideki
MIRAI, Association of Super-Advanced Electronics Technologies (ASET)
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Yoshiki Masahiko
Toshiba Nanoanalysis Corporation
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Nara Akiko
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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Satake Hideki
Mirai Association Of Super-advanced Electronics Technologies (aset)
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Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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TAKAYANAGI Mariko
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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SCHIMIZU Tatsuo
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Schimizu T
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Schimizu Tatsuo
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Satake Hideki
Mirai-aset Aist
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Fukushima N
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Fukushima Noburu
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Toriumi Akira
Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
著作論文
- A Guideline for Accurate Two-Frequency Capacitance Measurement for Ultra-Thin Gate Oxides
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics