Yamaguchi Takeshi | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)

もっと見る

スポンサーリンク