Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics

スポンサーリンク

概要

• 論文の詳細を見る
• 2005-09-13

著者

• YAMAGUCHI Takeshi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Nishiyama Akira

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Koyama Masato

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• IIJIMA Ryosuke

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• Iijima Ryosuke

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• TAKAYANAGI Mariko

  SoC Research & Development Center, Toshiba Corporation Semiconductor Company

• Yamaguchi Takeshi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Iijima Ryosuke

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Takayanagi Mariko

  Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com

• Takayanagi Mariko

  Semiconductor Company Toshiba Corporation

関連論文

• Olmesartan Improves Endothelin-Induced Hypertension and Oxidative Stress in Rats
• Effects of Angiotensin II on the Renal Interstitial Concentrations of NO_2/NO_3 and Cyclic GMP in Anesthetized Rats
• Contribution of Chymase-Dependent Angiotensin II Formation to the Progression of Tubulointerstitial Fibrosis in Obstructed Kidneys in Hamsters
• Effects of AT1 Receptor Blockade on Oxidative Stress in Dahl Rat Hypertensive Heart Failure (Heart Failure, Basic 7 (M), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
• Structure of Ultrathin Epitaxial CeO_2 Films Grown on Si(111)
• Systemic candesartan reduces brain angiotensin II via downregulation of brain renin-angiotensin system
• Comparison of central blood pressure and cardio-ankle vascular index for association with cardiac function in treated hypertensive patients
• The opposite roles of nNOS in cardiac ischemia-reperfusion-induced injury and in ischemia preconditioning-induced cardioprotection in mice
• Possible Involvement of Rho-Kinase in Aldosterone-Induced Vascular Smooth Muscle Cell Remodeling
• Augmentation of Intrarenal Angiotensin II Levels in Uninephrectomized Aldosterone/Salt-Treated Hypertensive Rats ; Renoprotective Effects of an Ultrahigh Dose of Olmesartan
• Effects of a New Calcium Channel Blocker, Azelnidipine, on Systemic Hemodynamics and Renal Sympathetic Nerve Activity in Spontaneously Hypertensive Rats
• Tissue Doppler Echocardiography for Predicting Arterial Stiffness Assessed by Cardio-Ankle Vascular Index
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
• Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Analysis of the Relationship between the Incisal Overjet in a Maxillary Denture and Phonetic Function Using a Speech Recognition System
• Influence of Loading Positions of Mandibular Unilateral Distal Extension Removable Partial Dentures on Movements of Abutment Tooth and Denture Base
• The effects of loading locations and direct retainers on the movements of the abutment tooth and denture base of removable partial dentures
• Elevated Extension Structure for 35nm MOSFETs
• Elevated Extension Structure for 35nm MOSFETs
• Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
• Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
• Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
• Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
• High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
• Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
• Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
• Drug Discovery for Overcoming Chronic Kidney Disease (CKD) : Pharmacological Effects of Mineralocorticoid-Receptor Blockers
• The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
• Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
• Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
• Dielectric Constant Behavior of Hf-O-N System
• Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
• Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
• Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
• Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
• Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
• Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• P7-19 Effect of superoxide dismutase inhibitor Diethyldithio-carbamic acid on renal sympathetic nerve activity in anesthetized rats(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATI
• P7-17 Temporary angiotensin blockade at a prediabetic stage attenuates the development of renal injury in type II diabetic rats(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATION)(
• P7-13 Contribution of aldosterone to the activation of mitogen-activated protein kinases and the progression of glomerular injury(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATION
• O-24 Independent regulation of intrarenal angiotensin receptors expression during the development of cyclosporine A-induced hypertension(KIDNEYS AND URINARY EXCRETION SYSTEM)(GENERAL SESSION BY ORAL PRESENTATION)(Proceedings of the 31st Annual Meeting)
• High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
• Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
• New Linewidth Measurement System Using Environmental Scanning Electron Microscope Technology
• Enhancement of Dielectric Constant due to Expansion of Lattice Spacing in CeO_2 Directly Grown on Si(111)
• Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming
• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
• Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
• Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
• Physical Understanding of Determinant Factors for φeff on La-based High-k
• Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics
• Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
• Work Function Instability at pMOS Metal/HfSiON Interfaces
• Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
• Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
• Dielectric Constant Behavior of Hf–O–N System
• Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
• Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
• Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
• Re-Examination of Performance and Reliability Degradation in Metal--Oxide--Nitride--Oxide--Semiconductor Memory with Ultrathin SiN Charge Trap Layers
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process
• Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes

もっと見る 閉じる

スポンサーリンク