Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-07-15

著者

• Nishiyama Akira

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• KAMIMUTA Yuuichi

  Advanced LSI Technology Laboratory, Toshiba Corp.

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• KAMATA Yoshiki

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• IIJIMA Ryosuke

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• INO Tsunehiro

  Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation

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• The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
• Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
• Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
• Dielectric Constant Behavior of Hf-O-N System
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• Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
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• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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