Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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ONO Mizuki
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Ono Mizuki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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