Koyama Masato | Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

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著作論文

Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
Dielectric Constant Behavior of Hf-O-N System
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
Dynamics of the Charge Centroid in Metal--Oxide--Nitride--Oxide--Silicon Memory Cells during Avalanche Injection and Fowler--Nordheim Injection Based on Incremental-Step-Pulse Programming
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
Physical Understanding of Determinant Factors for φeff on La-based High-k
Work Function Instability at pMOS Metal/HfSiON Interfaces
Dielectric Constant Behavior of Hf–O–N System
Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
Re-Examination of Performance and Reliability Degradation in Metal--Oxide--Nitride--Oxide--Semiconductor Memory with Ultrathin SiN Charge Trap Layers
Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process
Bipolar Resistive Switch Effects in Calcium Fluoride Thin Films Deposited on Silicon Bottom Electrodes

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