Koike Masahiro | Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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概要
- KOIKE Masahiroの詳細を見る
- 同名の論文著者
- Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporationの論文著者
関連著者
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Koike Masahiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koike Mitsuo
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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INO Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Yasuda Naoki
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Muraoka Kouichi
Advanced Lsi Technology Laboratory Toshiba Corporation
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Muraoka Kouichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Koike Masahiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Ino Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Suzuki Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Koike Masahiro
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kamimuta Yuuichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity