INO Tsunehiro | Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
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概要
- INO Tsunehiroの詳細を見る
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporationの論文著者
関連著者
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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INO Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koike Mitsuo
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Koike Masahiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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KAMATA Yoshiki
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Kamata Yoshiki
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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IIJIMA Ryosuke
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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SUZUKI Masamichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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TAKAYANAGI Mariko
SoC Research & Development Center, Toshiba Corporation Semiconductor Company
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TOMITA Mitsuhiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Tomita Mitsuhiro
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Iijima Ryosuke
Advanced Lsi Technology Laboratory Corporate Research & Development Center
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Nishiyama Akira
Advanced Lsi Technology Laboratory Toshiba Corporation
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Suzuki Masamichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
著作論文
- Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
- Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
- Dielectric Constant Behavior of Hf-O-N System
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
- Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
- Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks