Takayanagi Mariko | Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com

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Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
Study on Carrier Transport Limited by Coulomb Scattering due to Charged Centers in HfSiON MISFETs
Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

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