Nishiyama Akira | Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

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著作論文

Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
Elevated Extension Structure for 35nm MOSFETs
Elevated Extension Structure for 35nm MOSFETs
Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
Dielectric Constant Behavior of Hf-O-N System
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy

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