Nishiyama Akira | Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

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著作論文

Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
Elevated Extension Structure for 35nm MOSFETs
Elevated Extension Structure for 35nm MOSFETs
Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
Dielectric Constant Behavior of Hf-O-N System
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics
Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
Dielectric Constant Behavior of Hf–O–N System
Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks
Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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