Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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AOYAMA Tomonori
Semiconductor Leading Edge Technologies (Selete), AIST
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Suguro Kyoichi
Semiconductor Company Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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NAKAJIMA Kazuaki
Semiconductor Company, Toshiba Corporation
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KOYAMA Masato
Research and Development Center, Toshiba Corporation
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NISHIYAMA Akira
Research and Development Center, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Nakajima Kazuaki
Semiconductor Company Toshiba Corporation
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Aoyama Tomonori
Semiconductor Company Toshiba Corporation
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