Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Ono Mizuki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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