Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
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概要
- 論文の詳細を見る
The threshold control of metal/HfSiON gate stack is an important issue for the high-speed, low-power-consumption CMOS ULSI fabrication. Guidelines for the control of effective work function of the system are introduced, based upon several electrical experiments as well as physical analysis. Effective work function, φ_<eff> on HfSiON definitely depends on the bulk work function of the gate material, however φ_<eff> of almost all metals surpass those obtained from metal/SiO_2 systems. φ_<eff> modification effect in P and B segregation observed in metal/SiO_2 system disappears for HfSiON with relative Hf content of more than 10%. Noble metal gate electrode with the bulk work function of more than 5eV causes anomalous threshold voltage instability by FG annealing and should be avoided for the precise control of the threshold voltage.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
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Tsunashima Yoshitaka
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Tsuchiya Yoshinori
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Yoshiki Masahiko
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Yoshiki Masahiko
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Tsuchiya Yoshinori
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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