Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETs scaled down to Lg=30nm (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
スポンサーリンク
概要
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Mobility (μ) and L_g dependence of high-field velocity (ν) is systematically investigated. A wide variety of μ characteristics are realized with various gate dielectrics of SiO_2, SiON, HfLaSiON, and HfLaAlSiON. At L_g=30nm, the sensitivities of ν to μ and scaling in L_g,(δν/ν)/(δμ/μ) and (δνv)/(δL_g/L_g), are 0.43 and -0.45, respectively: in quasi-ballistic transport regime, μ and scaling in L_g still play an important role on I_<on> improvement with ν enhancement. High-κ MISFETs do not show any particular ν degradation in high-energy carrier transport. μ-T_<inv> characteristics of MG/high-κ gate-stacks required for 22nm-node and beyond is discussed based on the experimental data for μ and L_g dependence of ν.
- 2010-01-22
著者
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Goto Masakazu
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Tatsumua Ksuke
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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Kawanaka Shigeru
Center For Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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Kawanaka Shigeru
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Tatsumua Ksuke
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Toshiba Corp. Kawasaki Jpn
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Tatsumura Kosuke
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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