Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koga Junji
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishi Yoshifumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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KOGA Junji
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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