Dopant Redistribution at Nickel Silicide/Silicon Interface
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Kinoshita Atsuhiro
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Ohuchi Kazuya
Soc Research & Development Center Semiconductor Company Toshiba Corporation
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YAMAUCHI Takashi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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KATO Koichi
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Kinoshita Atsuhiro
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Kato Koichi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Yamauchi Takashi
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
関連論文
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
- Dopant Redistribution at Nickel Silicide/Silicon Interface
- Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETs scaled down to Lg=30nm (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
- Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
- Leakage mechanism of ultrathin SiON gate dielectric
- Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors