Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_<1-x>Ge_x)) Gate

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Tsunashima Yoshitaka

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• Tsuchiya Yoshinori

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Kinoshita Atsuhiro

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Tsuchiya Yoshinori

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Kinoshita Atsuhiro

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

関連論文

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• Physical Origins of Surface Carrier Density Dependences of Interface- and Remote-Coulomb Scattering Mobility in Si MOS Inversion Layer
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• Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
• New Approach to Negative Differential Conductance with High Peak-to-Valley Ratio in Silicon
• Mobility Enhancement of SOI MOSFETs due to Subband Modulation in Ultrathin SOI Films
• Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films
• Observation of Oxide Thickness Dependent Interface Roughness in Si MOS Structure
• Non-Volatile Doubly Stacked Si Dot Memory with Si Nano-Crystalline Layer
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
• Dependence of effective work function modulation with phosphorous segregation on Ni to Si ratio in Ni silicide/SiO2 systems
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process (Special Issue: Solid State Devices & Materials)
• Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
• Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
• Germanium-induced Modulation of Work Function and Impurity Segregation Effect in Fully-Ni-germanosilicide (Ni(Si_Ge_x)) Gate
• Accurate Evaluation of Inversion-Layer Mobility and Experimental Extraction of Local Strain Effect in sub-μm Si MOSFETs
• Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots
• Influence of Channel Depletion on the Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Experimental Analysis of Carrier Charging Characteristics in Si Nanocrystal Floating Gate Memory
• Power Consumption of Hybrid Circuits of Single-Electron Transistors and Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
• Silicon Planar Esaki Diode Operating at Room Temperature
• SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
• Challenge to new silicon devices
• Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
• Dopant Redistribution at Nickel Silicide/Silicon Interface
• Correlation between low-field mobility and high-field carrier velocity in quasi-ballistic-transport MISFETs scaled down to Lg=30nm (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
• Work Function Instability at pMOS Metal/HfSiON Interfaces
• Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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