Mobility Enhancement of SOI MOSFETs Due to Subband Modulation in Ultra-Thin SOI Films

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Toriumi Akira

  Mirai-advanced Semiconductor Research Center (mirai-asrc) National Institute Of Advanced Industrial

• Toriumi Akira

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Toshiba Corporation

• Takagi S

  Process & Manufacturing Center Semiconductor Company Toshiba Corporation

• TAKAGI Shin-ichi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• KOGA Junji

  Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation

• Koga J

  Advanced Lsi Technology Laboratory Research And Development Center Toshiba Corporation

• Koga Junji

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Toriumi Akira

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Toriumi Akira

  Mirai-asrc Aist

• Takagi Shin-ichi

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiha Corporation

関連論文

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• Study of La Concentration Dependent V_ Shift in Metal/HfLaOx/Si Capacitors
• Field-Dependent Mobility of Highly Oriented Pentacene Thin-Film Transistors
• Ge/GeO_2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
• Mobility Variations in Mono- and Multi-Layer Graphene Films
• Low Temperature Phosphorus Activation in Germanium through Nickel Germanidation for Shallow n^+/p Junction
• A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
• Grain Size Increase and Field-Effect Mobility Enhancement of Pentacene Thin Films Prepared in a Low-Pressure H_2 Ambient
• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
• Origin of Structural Phase Transformation of SiO_2-doped HfO_2
• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
• Effect of Ultra-thin Al_2O_3 Insertion on Fermi-level Pinning at Metal/Ge Interface
• Thermally Robust Germanium MIS Gate Stacks with LaYO_3 Dielectric Film
• Direct Evidence of GeO Volatilization from GeO_2 Films and Impact of Its Suppression on GeO_2/Ge MIS Characteristics
• Reduction of Bias-Induced Threshold Voltage Shift in Pentacene Field Effect Transistors by Interface Modification and Molecular Ordering
• Suppression of Leakage Current and Moisture Absorption of La_2O_3 films with Ultraviolet Ozone Post Treatment
• Excellent Leakage Current of Crystallized Silicon-Doped HfO_2 Films Down to Sub-nm EOT
• Thermally Robust Y_2O_3/Ge MOS Capacitors
• Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon
• Design Methodology for La_2O_3-Based Ternally Higher-κ Dielectrics
• A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS
• Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing
• Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification
• Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount of Si
• Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 stacked structures by UHV-C-AFM
• Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by the Time-Dependent OCP Measurement
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• A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100nm Strained Silicon-on-Insulator MOSFETs
• A Novel Fabrication Technique of Ultra-Thin and Relaxed SiGe Buffer Layers with High Ge Content for Sub-100nm Strained Silicon-on-Insulator MOSFETs
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• Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
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• Observation of Oxide-Thickness-Dependent Interface Roughness in Si MOS Structure
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• Study on Oxynitride Buffer Layers in HfO_2 Metal-Insulator-Semiconductor Structures for Improving Metal-Insulator-Semiconductor Field-Effect Transistor Performance
• Degradation Mechanism of HfAlO_x/SiO_2 Stacked Gate Dielectric Films through Transient and Steady State Leakage Current Analysis
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
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• Phenomenological Studies in Laser Cladding. Part II. : Thermometrical Experiments on the Melt Pool
• Phenomenological Studies in Laser Cladding. Part I. : Time-Resolved Measurements of the Absorptivity of Metal Powder
• Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO_2/Si Direct-Contact Gate Stacks
• Impact of Initial Traps on TDDB and NBTI Reliabilities in High-k Gate Dielectrics
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• The first principles calculations of Fermi level pinning in FUSI/PtSi/HfO_2/Si system induced by local distortion of HfO_2
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• Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
• A Study of the Effect of Deuterium on Stress-Induced Leakage Current
• Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
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• SET/CMOS Hybrid for Future Low-Power LSI : Experimental Demonstration, Power Estimation, and Strategy for Its Reduction
• Challenge to new silicon devices
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• Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
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• A New Design Scheme for Logic Circuits with Single Electron Transistors
• Study on Zr-Silicate Interfacial Layer of ZrO_2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method
• High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3
• High Dielectric Constant of a Mixture of N-Alkyl Aliphatic Amides
• Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
• Higher-k Scalability and Leakage Current Reduction of SiO-Doped HfO in Direct Tunneling Regime
• Unified Roughness Scattering Model Incorporating Scattering Component Induced by Thickness Fluctuations in Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors
• Quantitative Examination of Mobility Lowering Associated with Ultrathin Gate Oxides in Silicon Metal-Oxide-Semiconductor Inversion Layer
• Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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