Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• Toriumi Akira

  Advanced Lsi Technology Laboratory Toshiba Corporation

• SATAKE Hideki

  Advanced LSI Technology Laboratory Research & Development Center, Toshiba Co.

• Mitani Yuichiro

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Mitani Yuichiro

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Co.

• Satake Hideki

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Satake Hideki

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Toriumi Akira

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• TORIUMI Akira

  Advanced LSI Technology Laboratory, Toshiba Corp.

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• Evidence of Electron Trapping Center at Pentacene/SiO_2 Interface
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• Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE) : Interfacial Dipole and Band Diagram in Al/Hf(Si)O_2/Si MOS Structure
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