Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
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MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
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MIYANO Kiyotaka
Microelectronics Engineering Laboratory, Toshiba Corp.
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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KAMBAYASHI Shigeru
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
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Kambayashi Shigeru
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Miyano Kiyotaka
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
関連論文
- Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
- Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
- Precipitation of Boron in Highly Boron-Doped Silicon
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Diffusion and Segregation of Carbon in SiO_2 Films
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors
- Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation
- Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
- Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface