Diffusion and Segregation of Carbon in SiO_2 Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
-
MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
-
Yoshiki Masahiko
R&d Center Toshiba Corp.
-
Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
-
Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
-
Kambayashi Shigeru
R&d Center Toshiba Corp.
-
KAMIYA Eiji
Microelectronics Engineering Lab., Toshiba Corp.
-
ARAI Norihisa
Toshiba Microelectronics Corp.
-
SONODA Masahisa
Semiconductor Manufacturing Engineering Center, Toshiba Corp.
-
YOSHIKI Masahiko
R&D Center, Toshiba Corp.
-
TAKAGI Shin-ichi
R&D Center, Toshiba Corp.
-
WAKAMIYA Mikio
Semiconductor Manufacturing Engineering Center, Toshiba Corp.
-
KAMBAYASHI Shigeru
R&D Center, Toshiba Corp.
-
MIKATA Yuichi
Semiconductor Manufacturing Engineering Center, Toshiba Corp.
-
MORI Sei-ichi
Microelectronics Engineering Lab., Toshiba Corp.
-
KASHIWAGI Masahiro
R&D Center, Toshiba Corp.
-
Kamiya Eiji
Microelectronics Engineering Lab. Toshiba Corp.
-
Mikata Yuichi
Semiconductor Manufacturing Engineering Center Toshiba Corp.
-
Mori Sei-ichi
Microelectronics Engineering Lab. Toshiba Corp.
-
Wakamiya Mikio
Semiconductor Manufacturing Engineering Center Toshiba Corp.
-
Sonoda Masahisa
Semiconductor Manufacturing Engineering Center Toshiba Corp.
-
Kashiwagi M
Saitama Univ. Saitama Jpn
-
Takagi Shin-ichi
R&d Center Toshiba Corp.
関連論文
- Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
- Precipitation of Boron in Highly Boron-Doped Silicon
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Diffusion and Segregation of Carbon in SiO_2 Films
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor