Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-08-15
著者
-
Miyano K
Toshiba Corp. Yokohama Jpn
-
MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
-
MIYANO Kiyotaka
Microelectronics Engineering Laboratory, Toshiba Corp.
-
Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
-
Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
-
OHUCHI Kazuya
Microelectronics Engineering Laboratory, Toshiba Corporation
-
Ohuchi Kimihiro
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
-
Hokazono A
Toshiba Corp. Kanagawa Jpn
-
Ohiwa Tokuhisa
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
-
HAYASHI Hisataka
Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company
-
HOKAZONO Akira
Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company
-
Miyano Kiyotaka
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
-
Hayashi Hisataka
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
-
Hayashi Hisataka
Microelectronics Engineering Lab. Toshiba Corporation
関連論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Single Crystalline Silicon Floating Gate Technology for Sub-10nm Interelectrode Dielectrics
- Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 μm CMOS and Beyond
- Precipitation of Boron in Highly Boron-Doped Silicon
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Intrinsic Junction Leakage Generated by Cobalt In-Diffusion during CoSi_2 Formation
- Diffusion and Segregation of Carbon in SiO_2 Films
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping (VPD)
- Dominant Factor for the Concentration of Phosphorus Introduced by Vapor Phase Doping
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Capillary Wave Propagation on Water Covered with Polyamic Acid Monolayer Films
- Enhancement/Depletion Surface Channel Field Effect Transistors of Diamond and Their Logic Circuits
- Junction Leakage Generation by NiSi Thermal Instability Characterized Using Damage-Free n+/p Silicon Diodes
- Nonthermal Influence of Microwave Power on Chemical Reactions
- Mechanism of Highly Selective SiO_2 to Si_3N_4 Etching Using C_4F_8 + CO Magnetron Plasma
- Hole Generation without Annealing in High Dose Boron Implanted Silicon : Heavy Doping by B_ Icosahedron as a Double Acceptor