Miyano K | Toshiba Corp. Yokohama Jpn
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概要
関連著者
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Miyano K
Toshiba Corp. Yokohama Jpn
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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MIZUSHIMA Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MIYANO Kiyotaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Tsunashima Y
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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MIYANO Kiyotaka
Microelectronics Engineering Laboratory, Toshiba Corp.
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Mizushima Ichiro
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Miyano Kiyotaka
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Miyano Kiyotaka
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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MIZUSHIMA Ichiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Ohuchi Kimihiro
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Hokazono A
Toshiba Corp. Kanagawa Jpn
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Suguro K
Toshiba Corporation Semiconductor Company
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Yagishita A
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Suguro Kyoichi
Toshiba Corporation Semiconductor Company
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NAKAJIMA Kazuaki
Microelectronics Engineering Labs., Toshiba Corporation
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MIZUSHIMA Ichiro
Microelectronics Engineering Laboratory, Toshiba Corp.
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SUGURO Kyoichi
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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AKASAKA Yasushi
Microelectronics Engineering Laboratory, Toshiba Corp.
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Nakajima Kensuke
Research Institute Of Electrical Communication Tohoku University
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Mizushima Ichiro
Microelectronics Engineering Laboratory Semiconductor Company Toshiba Corporation
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OHUCHI Kazuya
Device Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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HOKAZONO Akira
Device Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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Akasaka Yasushi
Microelectronics Engineering Laboratory Toshiba Corporation
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Nakajima Kazuaki
Microelectronics Engineering Labs. Toshiba Corporation
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Saito Tomohiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Sato Shin'ya
Department Of Electrical Engineering Nagaoka University Of Technology
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Miyano Kenjiro
Department Of Applied Physics The University Of Tokyo
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Miyano Kenjiro
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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SATO Tsutomu
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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ARIKADO Tsunetoshi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Kaneko Akio
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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YAGISHITA Atsushi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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TSUNASHIMA Yoshitaka
Microelectronics Engineering Laboratory, Semiconductor Company, Toshiba Corporation
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TAKAHASHI Mamoru
Research and Development Center, Toshiba Corp.
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TANAKA Satoko
Semiconductor Group, Toshiba Corp.
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Mitsutake K
Toshiba Corp. Yokohama Jpn
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Tsunashima Yoshitaka
Microelectronics Engineering Laboratory Toshiba Corp.
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OHUCHI Kazuya
Microelectronics Engineering Laboratory, Toshiba Corporation
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Tamada K
Riken (the Inst. Physical And Chemical Res.) Saitama Jpn
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Ohiwa Tokuhisa
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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KOIKE Mitsuo
R&D Center, Toshiba Corporation
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SATO Tsutomu
Microelectronics Engineering Laboratory, Toshiba Corporation
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SAITO Yoshihiko
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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HAYASHI Hisataka
Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company
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HOKAZONO Akira
Microelectronics Engineering Laboratory, Toshiba Corporation Semiconductor Company
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TAMADA Kaoru
Tsukuba Research Laboratory, Japan Synthetic Rubber Co., Ltd.
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Eguchi Kazuhiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Saito Yoshihiko
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Hayashi Hisataka
Microelectronics Engineering Laboratory Toshiba Corporation Semiconductor Company
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Hayashi Hisataka
Microelectronics Engineering Lab. Toshiba Corporation
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Saito T
School Of Engineering Nagoya University
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Takahashi Mamoru
Research And Development Center Toshiba Corp.
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Sato Tsutomu
Microelectronics Engineering Laboratory Toshiba Corporation
著作論文
- Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
- Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
- Mechanism of Defect Formation during Low-Temperature Si Epitaxy on Clean Si Substrate
- Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
- Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
- Influence of Reactive Ion Etching Applied to Si Substrate on Epitaxial Si Growth and Its Removal
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
- Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects
- Capillary Wave Propagation on Water Covered with Polyamic Acid Monolayer Films