MIZUSHIMA Ichiro | Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation

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著作論文

Defects Induced by Carbon Contamination in Low-Temperature Epitaxial Silicon Films Grown with Monosilane
Fabrication of Silicon-on-Nothing Structure by Substrate Engineering Using the Empty-Space-in-Silicon Formation Technique
Micro-structure Transformation of Silicon : A Newly Developed Transformation Technology for Patternin Silicon Surfaces using the Surface Migration of Silico Atoms by Hydrogen Annealing
Novel Elevated Source/Drain Technology for FinFET Overcoming Agglomeration and Facet Problems Utilizing Solid Phase Epitaxy
Retarding Mechanism of Si Selective Epitaxial Growth on CMOS Structure due to Doped Arsenic in the Si Substrate
Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow Shallow Trench Isolation
Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
SOI/Bulk Hybrid Wafer Fabrication Process Using Selective Epitaxial Growth (SEG) Technique for High-End SoC Applications

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