Facet-Free Si Selective Epitaxial Growth Adaptable to Elevated Source/Drain MOSFETs with Narrow STI
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Miyano K
Toshiba Corp. Yokohama Jpn
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MIZUSHIMA Ichiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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MIYANO Kiyotaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mizushima I
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Mizushima Ichiro
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsunashima Y
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Ohuchi Kimihiro
System Lsi Research & Development Center Semiconductor Company Toshiba Corporation
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Hokazono A
Toshiba Corp. Kanagawa Jpn
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OHUCHI Kazuya
Device Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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HOKAZONO Akira
Device Engineering Laboratory, Microelectronics Engineering Laboratory, Toshiba Corporation
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Miyano Kiyotaka
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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MIZUSHIMA Ichiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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