Formation of Ultrathin SiON Films on Si Substrates Having Different Orientations
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概要
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We investigated the formation of ${\sim}1$–3 nm ultrathin SiON films by the plasma nitridation of oxidized Si substrates having different orientations, namely, (100), (110), and (111). Oxidation was performed by dry, wet, and plasma oxidation processes with rapid thermal oxidation (RTO), in situ steam generation (ISSG), and a slot plane antenna (SPA), respectively. Nitridation was performed by a plasma nitridation process with SPA. The thickness of base SiO2 films prepared by a plasma oxide process was independent of substrate orientation unlike in the dry and wet oxidation processes. Furthermore, no significant discrepancy in nitrogen areal density was observed among the SiON films grown by the plasma nitridation of differently oriented oxidized Si substrates. Our results suggest that SiON films with arbitrary nitrogen densities and thicknesses can be prepared by oxidation and plasma nitridation irrespective of the Si substrate orientation.
- 2008-06-25
著者
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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SHIMIZU Takashi
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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MIZUSHIMA Ichiro
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Mizushima Ichiro
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kasahara Kiyotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Saki Kazuo
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Uchitomi Naotaka
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Saki Kazuo
Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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