Optical Characterization of Heavily Sn-Doped GaAs_<1-x>Sb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-30
著者
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KATO Ariyuki
Department of Chemistry, Nagaoka University of Technology
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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NISHINO Fumio
Department of Electrical Engineering, Nagaoka University of Technology
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TAKEI Tatsuya
Department of Electrical Engineering, Nagaoka University of Technology
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JINBO Yoshio
Department of Electrical Engineering, Nagaoka University of Technology
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Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
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Kato Ariyuki
Department Of Electrical Engineering Nagaoka University Of Technology
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Nishino Fumio
Department Of Electrical Engineering Nagaoka University Of Technology
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Takei Tatsuya
Department Of Electrical Engineering Nagaoka University Of Technology
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- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Preparation of Polycrystalline Silicon Thin Films by Pulsed Ion-Beam Evaporation
- Optical Characterization of Heavily Sn-Doped GaAs_Sb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates
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- Characterization of GaSb/AlGaSb Multi-Quantum-Well Structures Grown on Si(001) Substrates
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