Anomalous Hall Effect and Magnetoresistance in Mn-Doped ZnSnAs2 Epitaxial Film on InP Substrates
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概要
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We present for the first time the temperature dependence of resistivity, anomalous Hall effect, and extraordinary magnetoresistance (MR) in 6.5% Mn-doped ZnSnAs2 epitaxial film prepared by molecular beam epitaxy (MBE) on InP(001) substrates. The magnetic field dependence of magnetization ($M$--$H$ curve) show clear hysteresis loops at 300 K for magnetic fields applied both perpendicular and parallel to the sample surface. The Curie temperature was evaluated to be 350 K. Near-zero-field hysteresis loops in the anomalous Hall resistance were also observed at various temperatures corresponding to the hysteretic out-of-plane magnetization of the sample. Negative and positive values of MR were observed in the low-field region. The behavior of the MR can be properly described by the Khosla--Fischer semi-empirical model for spin scattering of carriers in an impurity band. These characteristics strongly indicate a carrier-spin interaction in Mn-doped ZnSnAs2.
- 2011-01-25
著者
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Uchitomi Naotaka
Department Of Electrical Engineering Nagaoka University Of Technology
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Jinbo Yoshio
Department Of Electrical Engineering Nagaoka University Of Technology
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Oomae Hiroto
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Asubar Joel
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Jinbo Yoshio
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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